advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v lower on-resistance r ds(on) 4m ? fast switching characteristics i d 75a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.71 pulsed drain current 1 300 total power dissipation 89 continuous drain current 3 75 continuous drain current 50 drain-source voltage 30 gate-source voltage + 20 201106093 1 a p92t03gh/j-hf halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 4 parameter rating g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap92t03gj) are available for low-profile applications. g d s to-252(h) g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =40a - - 4 m ? v gs =4.5v, i d =30a - - 5.2 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 2 v g fs forward transconductance v ds =10v, i d =40a - 100 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 45 72 nc q gs gate-source charge v ds =20v - 6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 26 - nc t d(on) turn-on delay time 2 v ds =15v - 12 - ns t r rise time i d =40a - 80 - ns t d(off) turn-off delay time r g =1 ? ,v gs =10v - 40 - ns t f fall time r d =0.375 ? -7- ns c iss input capacitance v gs =0v - 3500 5600 pf c oss output capacitance v ds =25v - 930 - pf c rss reverse transfer capacitance f=1.0mhz - 770 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =20a, v gs =0v, - 39 - ns q rr reverse recovery charge di/dt=100a/s - 42 - nc notes: 1.pulse width limited by max junction temperature. 2.pulse test 3.package limitation current is 75a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap92t03gh/j-hf 4.surface mounted on 1 in 2 copper pad of fr4 board
a p92t03gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3 0 40 80 120 160 200 240 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 40 80 120 160 200 240 280 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 2 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 3 4 5 6 0 20406080100 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v 0 2 4 6 8 10 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =30a t c =25
ap92t03gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =12v v ds =16v v ds =20v 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 40 80 120 160 200 240 280 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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